SIMSの微小部深さ方向分析におけるドーパント濃度決定法

概要

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In order to improve the depth resolution in SIMS depth analysis, it is important to reduce the undesired ions originated from the crater wall of the etching crater. Sample preparation of mesa-structure formation leads to a depth profile with high depth resolution and high dynamic range, even if the gate-area-ratio, which means the ratio of detecting area to raster area, is very high of from 50 to 90%. In case of the mesa-structure for ion implanted sample, however, it was hard to accurately determine the dopant concentration by conventional method using the RSF value. As an alternative method, we applied here the following method: first, A ΔR_p values, the standard deviation of projected range, were measured from the depth profiles! then, the dopant concentration was estimated using the measured ΔR_p values and the ion dose following LSS theory. In this paper, the ΔR_p values and dopant concentration values are studied by systematically changing the gatearea-ratio and compared with the calculated values.