赤外ファラデー効果の研究 : III 試料内内部多重反射効果

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概要

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• This paper discusses investigation on the effect of the internal multiple reflection of light in the specimen upon the measurement of infrared Faraday rotation in semiconductors. Simple calculation is given when no interference of the transmitted light occurs. The amount of this effect in this case has hitherto recieved little attention. However, in the conditions under which measurements of infrared Faraday rotations are usually done, this effect may become a considerable amount. If the specimen has higher refractive index as 4 (usually semiconductors have high refractive indices in infrared region), and its transmissivity for the incident light is 0.40, the calculation shows that the ratio to φ of the difference Δ between the observed effective rotation φ and the single pass rotation θ becomes 0.20 in the case of small rotations. A diagram (Fig. 3), from which the single pass rotation θ is easily obtained from the observed effective rotation φ, is given. In this diagram, as the parameter which represents the state of the specimen, ζ = Re^<-Kd> is taken, where R, K and d are respectively the reflectivity, the absorption coefficient and the thickness of the specimen. The light transmitted through the specimen becomes incomplete polarized light even if the incident light is completely polarized. The degree of polarization of the transmitted light is calculated. In the case of small rotations, this degree of polarization differs very little from unity. Also a diagram (Fig. 5), from which the parameter ζ is easily obtained from the refractive index n and the transmissivity T of the specimen, is given. Finally from the observed infrared Faraday rotation in n-Si single crystal, its single pass value is calculated and discussed with the electrical properties of the crystal.

• 明治大学の論文

著者

• 吉本 普

  明治大学

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