High-Rate Deposition of High-Quality, Thick Cubic Boron Nitride Films by Bias- Assisted DC Jet Plasma Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• Cubic boron nitride thin films were deposited on(100)silicon substrates by DC jet plasma chemical vapor deposition in an Ar-N_2-BF_3-H_2 gas system. Negative DC bias was applied on the substrate during deposition. Scanning electron microscopy, x-ray diffraction, infrared and Raman spectroscopy were carried out to characterize the samples. It was found that boron nitride flims with cubic phase over 90% were synthesized under optimized conditions. A high deposition rate of about 0.3μm/min and a film thickness over 3μm were firstly achieved. Furthermore, the Raman measurements show clear TO and LO characteristic peaks of C-BN with a full width at half maximum of 28.8 and 19.7cm^<-1>revealing a high quality of the deposited films.

• 社団法人応用物理学会の論文
• 2000-05-15

著者

• Zhang Wenjun

  National Institute For Research In Inorganic Materials

• MATSUMOTO Seiichiro

  National Institute for Research in Inorganic Materials

関連論文

• Vapor Deposition of Diamond Particles from Methane
• High-Rate Deposition of High-Quality, Thick Cubic Boron Nitride Films by Bias- Assisted DC Jet Plasma Chemical Vapor Deposition
• Formation of 2H-Type SiC Films by Reactive Sputtering
• Substrate Bias Effect on Diamond Deposition by DC Plasma Jet

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