Substrate Bias Effect on Diamond Deposition by DC Plasma Jet

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概要

• 論文の詳細を見る

• By applying positive bias voltage to a substrate in diamond CVD by a dc plasma jet of the Ar-H_2-CH_4 system, the deposition rate increased more than twofold, and the maximum rate of 15 μm/min was obtained. The deposition area also increased but the uniformity of film thickness did not improve. Applying the bias voltage to a ring electrode around the substate increased the deposition rate by nearly the same amount without increasing the substrate temperature.

• 社団法人応用物理学会の論文
• 1990-10-20

著者

• MATSUMOTO Seiichiro

  National Institute for Research in Inorganic Materials

• HOSOYA Ikuo

  National Institute for Research in Inorganic Materials

• CHOUNAN Takeshi

  National Institute for Research in Inorganic Materials

• Hosoya Ikuo

  National Institute For Research In Inorganic Materials:(present Address)res. And Plan. Dept. Idemits

• Chounan Takeshi

  National Institute For Research In Inorganic Materials:(present Address)central Res. Inst. Sumitomo

関連論文

• Vapor Deposition of Diamond Particles from Methane
• High-Rate Deposition of High-Quality, Thick Cubic Boron Nitride Films by Bias- Assisted DC Jet Plasma Chemical Vapor Deposition
• Formation of 2H-Type SiC Films by Reactive Sputtering
• Substrate Bias Effect on Diamond Deposition by DC Plasma Jet

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