A Novel Simulation Algorithm for Si Valence Hole Quantization of Inversion Layer in Metal-Oxide-Semiconductor Devices : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-02-15
著者
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Li Ming-Fu
Centre for Integrated Circuit Failure Analysis and Reliability, Faculty of Engineering, National Uni
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Hou Yong-tian
Centre For Ic Failure Analysis & Reliability Department Of Electrical & Computer Engineering
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Li Ming-fu
Centre For Ic Failure Analysis & Reliability Department Of Electrical & Computer Engineering
関連論文
- Correlation between Charge Pumping Method and Direct-Current Current Voltage Methodin p-Type Metal-Oxide-Semiconductor Field-Effect Transistors
- A Novel Simulation Algorithm for Si Valence Hole Quantization of Inversion Layer in Metal-Oxide-Semiconductor Devices : Semiconductors