Correlation between Charge Pumping Method and Direct-Current Current Voltage Methodin p-Type Metal-Oxide-Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-08-15
著者
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Ng Kok-hooi
Centre For Integrated Circuit Failure Analysis And Reliability Faculty Of Engineering National Unive
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Jie Bin-Bin
Centre for Integrated Circuit Failure Analysis and Reliability, Facutly of Engineering, National Uni
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Li Ming-Fu
Centre for Integrated Circuit Failure Analysis and Reliability, Faculty of Engineering, National Uni
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Lo Keng-Foo
Chartered Semiconductor Manufacturing
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Li M‐f
National Univ. Singapore Sgp
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Li Ming-fu
Centre For Ic Failure Analysis & Reliability Department Of Electrical & Computer Engineering
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Jie Bin-bin
Centre For Integrated Circuit Failure Analysis And Reliability Facutly Of Engineering National Unive
関連論文
- Correlation between Charge Pumping Method and Direct-Current Current Voltage Methodin p-Type Metal-Oxide-Semiconductor Field-Effect Transistors
- A Novel Simulation Algorithm for Si Valence Hole Quantization of Inversion Layer in Metal-Oxide-Semiconductor Devices : Semiconductors