Quantitative Secondary Ion Mass Spectrometry Analysis of Carbon and Fluorine Impurities on Silicon Wafers Stored in Polymer Carrier Cases

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概要

• 論文の詳細を見る

• We have investigated the carbon and fluoride contaminants on silicon wafers during their storage in quartz-glass boxes equipped with carrier cases made of either polypropylene(PP), polybutylene-terephthalate(PBT), or perfluoroalkoxy polymer(PFA).The adsorbed organic contaminants on the wafer surfaces were identified by time-of-flight secondary-ion mass spectrometry (TOF-SIMS).The concentrations on the wafer surface have been measured as a function of wafer storage positions as well as carrier case strage time.For quantitative analyses, secondary-ion mass spectrometry(SIMS)combined with the encapsulation method was employed, and carbon(^<12>C^-)and fluorine(^<19>F^-)ions were detected.It has been found that the amount of adsorbed contaminants on the surface of silicon wafers depend on both the wafer storage conditions and the carrier case materials.

• 社団法人応用物理学会の論文
• 2000-08-15

著者

• Yamazaki Hideyuki

  Toshiba Corporation Research And Development Center

• TAMAOKI Makiko

  Toshiba Corporation, Semiconductor Company

• OOHASHI Masaya

  Toshiba Microelectronics Corporation, Analysis Laboratory

• Tamaoki Makiko

  Toshiba Corporation Semiconductor Company

• Oohashi Masaya

  Toshiba Microelectronics Corporation Analysis Laboratory

関連論文

• Evaluation of the Electric Field above a Specimen Surface during SIMS Analysis
• Quantitative Depth Profiling of Argon in Tungsten Films by Secondary Ion Mass Spectrometry
• Quantitative Secondary Ion Mass Spectrometry Analysis of Carbon and Fluorine Impurities on Silicon Wafers Stored in Polymer Carrier Cases

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