Preparation and Properties of SrBi_2Ta_2O_9 Ferroelectric Thin Films Using Excimer UV Irradiation and Seed Layer
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概要
- 論文の詳細を見る
Low-temperature processing of SrBi_2Ta_2O_9 (SBT) thin films on Pt(200nm)/Ti(50nm)/SiO_2/Si substrates was investigated by the sol-gel method. The excimer UV irradiation onto as-deposited SBT thin films at 200-300℃ in O_2 atmosphere and the use of a Sr-Ta-O seed layer were very effective in lowering the crystallization temperature for SBT thin films to 500℃. The SBT thin films prepared by an excirner uv process and subsequent rapid thermal annealing process with the seed layer showed a homogeneous and smooth surface microstructure with fine grains of approximately 50nm in size The 600℃-annealed SBT thin films of approximately 200nm thickness with the seed layer exhibited a Pr of 2.3μC/cm^2 and a Ec of 43kV/cm.
- 社団法人応用物理学会の論文
- 2001-09-30
著者
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TOGAWA Daichi
Department of Materials Science, Shonan Institute of Technology
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Hayashi Takashi
Shonan Institute of Technology
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Togawa D
Shonan Inst. Technol. Kanagawa Jpn
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TOGAWA Daichi
Shonan Institute of Technology
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Hayashi Takashi
Shonan Inst. Of Technol.
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