Temperature dependence of the electrical and electromechanical properties of Ba(Zr0.2Ti0.8)O3 thin films prepared by chemical solution deposition
スポンサーリンク
概要
- 論文の詳細を見る
Thin films of Ba(Zr0.2Ti0.8)O3 (BZT) were prepared on Pt/Ti/SiO2/Si and Pt/TiOx/SiO2/Si substrates by chemical solution deposition. The alkoxide–hydroxide method was applied. The temperature dependence of the electrical and electromechanical properties of the BZT thin films was investigated. Application of a Pt/TiOx/SiO2/Si substrate is effective in suppressing the unknown phase formation and in obtaining high permittivity of 1080 and tunability under 400 kV/cm of 84%. The XPS depth profile reveals that titanium and oxygen are richly present close to the BZT/Pt interface of the films on a Pt/TiOx/SiO2/Si substrate. The temperature dependences of permittivity, tunability and field-induced strain are slight between −100°C and 100°C. The piezoelectric coefficient at room temperature estimated from the slope of the displacement loop is 35 pm/V.
著者
-
Maiwa Hiroshi
Shonan Institute of Technology
-
Ohashi Kohei
Shonan Institute of Technology
-
Hayashi Takashi
Shonan Institute of Technology
-
Hayashi Takashi
Shonan Inst. Of Technol.
関連論文
- Temperature dependence of the electrical and electromechanical properties of Ba(Zr0.2Ti0.8)O3 thin films prepared by chemical solution deposition
- Low-Temperature Sintering and Properties of (Pb, Ba, Sr)(Zr, Ti, Sb)O_3 Piezoelectric Ceramics Using Sintering Aids
- Preparation of Na_Bi_TiO_3 by hydrothermal reaction
- Space Charge Effects on Ferroelectric Ceramic Particle Surfaces
- Preparation and Properties of SrBi_2Ta_2O_9 Ferroelectric Thin Films Using Excimer UV Irradiation and Seed Layer
- Electromechanical Properties of BaTiO3 Ceramics Prepared by Spark Plasma Sintering and Other Methods
- Preparation and Properties of BaTiO3 Ceramics by Spark Plasma Sintering