Nanoprojection-Shaped Silicon Field Emitter as Relativistic-Electron-Beam Source for Pumping KrF Lasers : Instrumentation, Measurement, and Fabrication Technology
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概要
- 論文の詳細を見る
The relativistic-electron-beam (e-beam) generation initiated by field emission from etched-silicon wafers with nanometer-scale needle-like projections on the surfaces (5-15 nm tip radius, 6μm height, and 10^6-10^9/cm^2 surface concentration) is reported. The time required for cathode-plasma formation is evaluated based on observed diode perveances. The application of the silicon emitters as e-beam sources for pumping KrF lasers is discussed.
- 2001-12-15
著者
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TAKAHASHI Eiichi
Electrotechnical Laboratory
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OWADANO Yoshiro
Electrotechnical Laboratory
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Owadano Yoshiro
National Institute Of Advanced Industrial Science And Technology
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TAKAHASHI Eiichi
National Institute of Advanced Industrial Science and Technology
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OKUDA Isao
National Institute of Advanced Industrial Science and Technology
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Okuda I
National Institute Of Advanced Industrial Science And Technology
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Takahashi E
National Institute Of Advanced Industrial Science And Technology
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