An Accurate Two-dimensional Semiconductor Device Analysis using Finite-Element Method
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概要
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A numerical method for analyzing semiconductor devices is described. To make the application of finite element method in semiconductor device simulation, we solved the Poisson and current continuity equation using the Galerkin method and Scharfetter-Gummel scheme in conjunction with 7-point Gaussian quadrature rule. It includes the SRH process, the mobility dependence on the impurity density and the electric field and the band-gap narrowing effect. We used Gummel and Newton algorithm to achieve the speed-up and high convergence rate. Finally, our numerical technique is applied to semiconductor devices and discussion of the electrical characteristics is presented.
- 一般社団法人電子情報通信学会の論文
- 2002-06-24
著者
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Won Taeyoung
School Of Electrical Engineering National It Research Center For Computational Electronics Inha Univ
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Yoon Sukin
School of Electrical and Computer Engineering, Inha University
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Yoon Sukin
School Of Electronics And Electrical Engineering Inha University
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Park Sechun
School of Electronics and Electrical Engineering, Inha University
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Park Sechun
School Of Electronics And Electrical Engineering Inha University
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