Crystal Characterization by Magnetoplasma Resonance in N-Type InSb

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概要

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• Magnetoplasma resonance (MPR) studies have been carried out on high purity n-InSb at 23 GHz over the temperature range 50-130 K to obtain more accurate and detailed crystal characterization. The mobility values estimated from MPR,μ_<MPR>, were found to be lower than the corresponding DC mobility, μ_<DC>. From the theoretical estimate of μ_<MPR> and the correlation between μ_<MPR> and the gradient of transverse magnetoresistance with respect to the magnetic field, it can be concluded that the upper limit of μ_<MPR> (∼0.5 μ_<DC>) is restricted by the energy dependence of τ and further μ_<MPR> reduction is mainly due to the spatial fluctuation of carrier concentration. This interpretation is supported by the feature of the temperature dependence of μ_<MPR>. The effects of low temperature heat treatment on n and μ_<MPR> are also discussed.

• 社団法人応用物理学会の論文
• 1981-08-05

著者

• Tsukioka Kunio

  Department Of Electronics Engineering Tamagawa University

関連論文

• Cyclotron Resonance of Polarons in AgBr at High Density Excitation
• DLTS Studies on InSb P-N^+ Diodes
• The Deformation Potential Constant of the Conduction Band in InSb
• Crystal Characterization by Magnetoplasma Resonance in N-Type InSb

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