Growth of Bismuth Layers on Si(100) Surfaces
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-03-05
著者
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KAWAZU Akira
Department of Applied Physics, The University of Tokyo
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Otsuki Tatsuo
Department Of Applied Physics The University Of Tokyo
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Kawazu Akira
Department Of Applied Physics Faculty Of Engineering University Of Tokyo:(present Address) Komatsu E
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TOMINAGA Goroh
Department of Applied Physics, The University of Tokyo
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Tominaga Goroh
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
関連論文
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- Observation of Hydrogen-Terminated Silicon (111) Surface by Ultrahigh-Vacuum Atomic Force Microscopy
- Growth of Bismuth Layers on Si(100) Surfaces
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