Study of Ga Adsorption Structure on Ni/Si(100) Surface by Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
The Ga adsorption structures on the Ni-induced Si(100) surface have been studied by scanning tunneling microscopy. The protrusions, which are different from Ga ad-dimer, are observed on the dimer vacancy lines (DVLs) after the Ga ad-dimers cover the Si region. The amount of protrusions increases as Ga coverage increases and these protrusions occupy the DVLs at about 0.50 monolayer. The type of protrusions on the DVLs is similar to the precursor state of the Ga clusters. Islands of different sizes are formed locally on the steps and terraces as coverage increases. Small islands are distributed evenly on the terraces after annealing the surface at 200 °C, whereas large islands are formed again at 400 °C. The changes in the distribution of the islands are associated with the nuclei sites on the DVLs and the transformation of the surface structure.
- 2010-08-25
著者
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Irokawa Katsumi
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Kawazu Akira
Department Of Applied Physics Faculty Of Engineering University Of Tokyo:(present Address) Komatsu E
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Hara Shinsuke
Department Of Applied Electronics Faculty Of Industrial Science And Technology Tokyo University Of S
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Miki Hirofumi
Department Of Physics Faculty Of Science And Technology Science University Of Tokyo
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Fujishiro Hiroki
Department Of Applied Electronics Faculty Of Industrial Science And Technology Tokyo University Of S
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Suzuki Toru
Department Of Biosphere And Environmental Sciences Faculty Of Environment Systems Rakuno Gakuen Univ
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Fuse Kazuhiro
Department of Applied Electronics, Faculty of Industrial Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Yagishita Kazuki
Department of Applied Electronics, Faculty of Industrial Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Hirata Yoshiki
Department of Applied Electronics, Faculty of Industrial Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Kawazu Akira
Department of Physics, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Irokawa Katsumi
Department of Physics, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Fujishiro Hiroki
Department of Applied Electronics, Faculty of Industrial Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Miki Hirofumi
Department of Physics, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Suzuki Toru
Department of Applied Electronics, Faculty of Industrial Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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