Effects of High-Temperature Annealing on the Electrical Characteristics of SOS-MOSFET's

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概要

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• Using SOS initially annealed in N_2 at different temperatures from 1050 to 1150℃ for up to 300 min, both n- and p-channel Si-gate SOS-MOSFET's are fabricated. In this fabrication, the total time at high temperature is limited within 120 min at 1050℃; the temperatures of other steps are kept lower than 900℃. A decrease in the field-effect mobility is found as the annealing time increases for n-channel devices in the saturation region; no change is observed in the mobility in the triode region. For p-channel devices, the field-effect mobility does not decrease in either the saturation or triode regions.

• 社団法人応用物理学会の論文
• 1981-02-05

著者

• Sasaki Nobuo

  Ic Division Fujitsu Limited

関連論文

• Charge Pumping Memory with SOS-MOS Transistors : A-3: LASER ANNEALING/SOS DEVICES
• A CMOS/SOS Synchronous Static RAM Fabricated with an Advanced SOS Technology : A-2: MOS DEVICE AND LIST (2)
• Anomalous Leakage Current of MOSFET's under BT Stress
• Effects of High-Temperature Annealing on the Electrical Characteristics of SOS-MOSFET's

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