Anomalous Leakage Current of MOSFET's under BT Stress

概要

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It is observed that the leakage current caused by BT stress decreases under further BT stress for both the n- and p-channel Si-gate MOSFET's without channel stoppers. This anomalous effect is explained by a new surface conduction model with a different boundary condition resulting from a thin SiO_2 film on the gate electrode. For + BT stress of n-channel devices, for instance, a positive charge spreads at the PSG-SiO_2 interface by ionic conduction, but negative ions accumulate on the SiO_2 film on the gate electrode. The electrostatic potential in the vicinity of the gate electrode is not constant but decreases with BT stress, in contradiction to the conventional surface conduction model.
社団法人応用物理学会の論文
1980-02-05