A CMOS/SOS Synchronous Static RAM Fabricated with an Advanced SOS Technology : A-2: MOS DEVICE AND LIST (2)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-03-01
著者
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Sasaki Nobuo
Ic Division Fujitsu Limited
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Nakano Motoo
Ic Division Fujitsu Limited
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Iwai Takashi
Ic Division Fujitsu Limited
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TOGEI Ryoiku
IC Division, Fujitsu Limited
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KOBAYASHI Yasuo
IC Division, Fujitsu Limited
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Togei Ryoiku
Ic Division Fujitsu Limited
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Kobayashi Yasuo
Ic Division Fujitsu Limited
関連論文
- Charge Pumping Memory with SOS-MOS Transistors : A-3: LASER ANNEALING/SOS DEVICES
- A CMOS/SOS Synchronous Static RAM Fabricated with an Advanced SOS Technology : A-2: MOS DEVICE AND LIST (2)
- Anomalous Leakage Current of MOSFET's under BT Stress
- Effects of High-Temperature Annealing on the Electrical Characteristics of SOS-MOSFET's