Multistability at the Tunneling -Ballistic Boundary in a Mesoscopic Device
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-05-31
著者
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Cleaver J.r.a.
Microelectronics Research Center Cavendish Laboratory Cambridge University
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NAKAZATO K.
Hitachi Cambridge Laboratory, Hitachi Europe Ltd.
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Williams D.a.
Hitachi Cambridge Laboratory Hitachi Europe Ltd.
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MUELLER H.H.
Microelectronics Research Center, Cavendish Laboratory, Cambridge University
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CHEN W.
Microelectronics Research Center, Cavendish Laboratory, Cambridge University
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WHITE J.D.
Hitachi Cambridge Laboratory, Hitachi Europe Ltd.
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ALLAM J.
Hitachi Cambridge Laboratory, Hitachi Europe Ltd.,
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White J.d.
Hitachi Cambridge Laboratory Hitachi Europe Ltd.
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Mueller H.h.
Microelectronics Research Center Cavendish Laboratory Cambridge University
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Allam J.
Hitachi Cambridge Laboratory Hitachi Europe Ltd.
関連論文
- Characterization of Tunnel-Barriers in Polycrystalline Si Point-Contact Single-Electron Transistors
- Fabrication of Free-Standing Single-Crystal Silicon Nanostructures for the Study of Thermal Transport and Defect scattering in Low Dimensional Systems : Microfabrication and Physics
- Multistability at the Tunneling -Ballistic Boundary in a Mesoscopic Device