Electronic and Magnetic Properties of f-Electron Systems in Relativistic Spin-Polarized LAPW Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-02-08
著者
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YAMAGAMI Hiroshi
Graduate School of Science, Tohoku University
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Yamagami Hiroshi
Graduate School Of Science Tohoku University
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Yamagami Hiroshi
Graduate School Of Science And Technology Niigata University
関連論文
- De Haas-van Alphen Effect of UB_2, UB_4 and UGa_3
- De Haas-van Alphen Effect and Energy Band Structure in UB_2
- The Fermi Surface of Itinerant 4f Electrons in CeNi
- Electronic Structure and Fermi Surface of UB_
- Electronic Structure of CeSn_3
- Magnetic and Fermi Surface Properties of the Ferromagnetic Compound UGa_2 : Electronic Properties, etc.
- Fermi Surface and de Haas-van Alphen Oscillation in both the Normal and Superconducting Mixed States of UPd_2Al_3
- Electronic Structure and Fermi Surface for LaNi_2Ge_2 and CeNi_2Ge_2
- Electronic and Magnetic Properties of f-Electron Systems in Relativistic Spin-Polarized LAPW Method
- Fermi Surface of ThC and UC
- All-Electron Spin-Polarized Relativistic Linearized APW Method : Electronic and Magnetic Properties of BCC Fe,HCP Gd and Uranium Monochalcogenides
- Effect of the Spin-Orbit Interaction on the Fermi Surface of LaSn_3
- Self-Consistent Symmetrized Relaticistic Augmented Plane Wave Method : Application to α-U
- de Haas-van Alphen Effect and RLAPW-Energy band Calculations in CeNi