Measurement of Stress Induced Birefringence of Bi_<12>GeO_<20> Single Crystals by a New Ellipsometry : A: Applications and Fundamentals
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-11-30
著者
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Nagao Chie
Materials And Electronic Devices Laboratory Mitsubishi Electric Co.
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MIKAMI Noboru
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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Mikami Noboru
Materials And Electronic Devices Laboratory Mitsubishi Electric Co.
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SAWADA Takao
Materials and Electronic Devices Laboratory, Mitsubishi Electric Co.
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SATO Ken
Materials and Electronic Devices Laboratory, Mitsubishi Electric Co.
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Sawada Takao
Materials And Electronic Devices Laboratory Mitsubishi Electric Co.
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Sato Ken
Materials And Electronic Devices Laboratory Mitsubishi Electric Co.
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Sato Ken
Materials & Electronic Devices Laboratory Mitsubishi Electric Corporation
関連論文
- Dielectric Properties of (Ba,Sr)TiO_3 Thin Films Deposited by RF Sputtering
- Measurement of Stress Induced Birefringence of Bi_GeO_ Single Crystals by a New Ellipsometry : A: Applications and Fundamentals
- High-temperature X-Ray Diffraction Measurements of ZnO Varistor Ceramics
- Effects of Contents of Bi_2O_3 and Sb_2O_3 on Lattice Parameters of Phases of ZnO Varistor Ceramics
- Preparation of Sr(Zr, Ti)O_3 Ceramics and Their Dielectric Properties at Microwave Frequencies
- Electric Properties of SrTiO_3 Thin Films Prepared by RF Sputtering
- Critical Current Density and Flux Creep in Melt-Processed Bi-Pb-Sr-Ca-Cu-O Superconductors