Electric Properties of SrTiO_3 Thin Films Prepared by RF Sputtering
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概要
- 論文の詳細を見る
Dielectric SrTiO_3 thin films have been prepared on Pt/SiO_2/Si-wafer by means of a conventional rf-magnetron sputtering technique. Electric and dielectric properties of the films have been studied. It is demonstrated that the leakage current of the films is strongly dependent on the atmosphere during deposition. The SrTiO_3 film 75 nm in thickness fabricated in pure O_2 of 26.6 Pa at 600℃ obtained the lowest leakage current density of 4.0 × 10^<-9> A/cm^2 at 2 V. Analysis of the leakage current vs applied voltage characteristic indicated that the conduction in the higher electric field was due to the Pool-Frenkel emission.
- 社団法人応用物理学会の論文
- 1992-09-30
著者
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Kuroiwa Takeharu
Materials & Electronic Devices Laboratory Mitsubishi Electric Corporation
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SATO Ken
Materials and Electronic Devices Laboratory, Mitsubishi Electric Co.
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HONDA Toshihisa
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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WATARI Hisao
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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Watari Hisao
Materials & Electronic Devices Laboratory Mitsubishi Electric Corporation
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Honda Toshihisa
Materials & Electronic Devices Laboratory Mitsubishi Electric Corporation
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Sato Ken
Materials & Electronic Devices Laboratory Mitsubishi Electric Corporation
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