Effects of High Temperature Hydrogen Annealing on n-Channel Si-Gate MNOS Devices : A-5: MEMORY DEVICES

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-30

著者

• Kondo Ryuji

  Central Research Laboratory Hitachi Ltd.

• Hagiwara Takaaki

  Central Research Laboratory Hitachi Ltd.

• Minami Shinichi

  Central Research Laboratory Hitachi Ltd.

• MINAMI Shin-ichi

  Central Research Laboratory, Hitachi Ltd.

• YATSUDA Yuji

  Central Research Laboratory, Hitachi, Ltd.

• ITOH Yokichi

  Central Research Laboratory, Hitachi, Ltd.

• Itoh Yokichi

  Central Research Laboratory Hitachi Ltd.

• Yatsuda Yuji

  Central Research Laboratory Hitachi Ltd.

関連論文

• Improvement of Written-State Retentivity by Scaling Down MNOS Memory Devices : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
• Effects of High Temperature Hydrogen Annealing on n-Channel Si-Gate MNOS Devices : A-5: MEMORY DEVICES
• n-channel Si-gate MNOS Device for High Speed EAROM : A-1: MOS DEVICE AND LIST (1)
• Dynamic Injection MNOS Memory Devices : A-5: MEMORY DEVICES
• Effects of Silicon Surface Conditions on Nickel-Silicon Contacts

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