Effects of Silicon Surface Conditions on Nickel-Silicon Contacts

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概要

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• The effect of residual damage or strain, induced by mirror polishing of silicon surface, on the height of Schottky barrier formed between Ni and n-type (111) Si was investigated. If a layer of one micron or greater was removed from the silicon surface, the barrier height decreased from about 0.56eV to about 0.53eV. This observation shows that an effect, detectable by Schottky barrier height, exists in the layer of about one micron thick on the mirror polished surface. In addition, by heat treatment at high temperatures, the effect of gas desorption from the silicon surface on the barrier height was investigated. The barrier height was found to increase with increasing temperature of the heat treatment. By heating at 1000℃ for 30 minutes, the barrier height of up to about 0.66eV was observed.

• 社団法人応用物理学会の論文
• 1970-08-05

著者

• Itoh Yokichi

  Central Research Laboratory Hitachi Ltd.

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• Dynamic Injection MNOS Memory Devices : A-5: MEMORY DEVICES
• Effects of Silicon Surface Conditions on Nickel-Silicon Contacts

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