Growth of 3-inch Langasite Single Crystal and Its Application to Substrate for Surface Acoustic Wave Filters
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-09-30
著者
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Uda S
Electronics Device R&d Center Mitsubishi Materials Corporation
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Uda Satoshi
Electronics Device R & D Center Mitsubishi Material Co. Ltd.
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Bungo A
Tohoku Univ. Sendai Jpn
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Bungo Akihiro
Microelectronics Laboratories Mitsubishi Materials Corp.
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Bungo Akihiro
Electronics Technology Research Center, Mitsubishi Materials Co. Ltd.
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Jian Chunyun
Electronics Technology Research Center, Mitsubishi Materials Co. Ltd.
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Jian C
Mitsubishi Materials Co. Ltd. Saitama Jpn
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Uda Satoshi
Electrnics Device R&d Center Mitsubishi Material Co. Ltd.
関連論文
- Mode of Occurrence and Cause of Cracking of Li_2B_4O_7 Single Crystals during Growth by Czoehralski Method
- Epitaxial Growth of Er^ -Doped CaF_2 by Molecular Beam Epitaxy
- Factors Influencing the Variation of Surface Acoustic Wave Velocity in Lithium Tetraborate
- Consideration of Small Variation of Surface Acoustic Wave (SAW) Velocity in Lithium Tetraborate
- Mode of Occurrence and Cause of Twinning in Lithium Tetraborate Grown by Czocharalski Method
- Growth of Crack-Free 3-Inch-Diameter Lithium Tetraborate Single Crystals by Czochralski Method ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Nonlinear Optical Properties of Langasite Crystal
- Characterization of Defects in Li_2B_4O_7 Crystals Grown by Czochralski and Bridgman Methods
- Characterization of Homogeneity of Langasite Wafers Using Bulk-Wave Measurement
- A Wireless Surface Acoustic Wave Temperature Sensor Using Langasite as Substrate Material for High-Temperature Applications
- Effects of Electrode Materials On Natural Unidirectionality of Langasite
- Growth of 3-inch Langasite Single Crystal and Its Application to Substrate for Surface Acoustic Wave Filters
- Analysis of Surface Acoustic Wave Properties of the Rotated Y-cut Langasite Substrate
- Geometric Isotope Effect of NaH_3(SeO_3)_2
- A Wireless Surface Acoustic Wave Temperature Sensor Using Langasite as Substrate Material for High-Temperature Applications
- Characterization of Homogeneity of Langasite Wafers Using Bulk-Wave Measurement