Investigation and Comparison of the Noise in the Gate and Substrate Current after Soft-Breakdown

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概要

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• Random telegraph signal after soft-breakdown is explained by the capture-emission of electrons in the same oxide traps of the soft-breakdown path. It is shown that not only the gate current noise, but also the substrate current noise largely increase at the soft-breakdown moment in n-channel metal-oxide-semiconductor field effect transistor (nMOSFET) stressed with positive gate polarity. A strong correlation of the noise in the gate and substrate current is reported.

• 社団法人応用物理学会の論文
• 1999-04-30

著者

• Degraeve Robin

  Imec

• Nigam Tanya

  Imec

• GROESENEKEN Guido

  IMEC

• MAES Herman

  IMEC, the Katholieke Universiteit of Lsuven (kul)

• Crupi Felice

  Imec:(present Address)department Of Information Engineering University Of Pisa

• Maes Herman

  Imec

関連論文

• Gate Voltage Dependence of Reliability for Ultra-Thin Oxides
• Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime
• Reliability of Ultra-Thin Gate Oxides Below 3nm in the Direct Tunneling Regime
• A CMOS DC Voltage Doubler with Nonoverlapping Switching Control
• Investigation and Comparison of the Noise in the Gate and Substrate Current after Soft-Breakdown

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