Hot Electron Effects in Infrared Multiple-Quantum-Well Phototransistor Victor
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概要
- 論文の詳細を見る
This paper presents a theoretical analysis of physical mechanisms responsible for operation and performance, in particular, optical gain, of infrared multiple-quantum-well (MQW) photodetectors. The influence of the device structure on the distribution of potential, which, in turn, determines the carrier injection and transport properties, is discussed. We studied the hot electron effects in the MQW phototransistor, which has wide triangular emitter and collector barriers and an equipotential base. It is shown that the hot electron transport in the base, provided by a wide gap emitter, can give rise to a very high values of optical gain, as high as 1000.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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RYZHII Victor
Department of Computer Hardware, University of Aizu
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ERSHOV Maxim
Department of Computer Hardware, University of Aizu
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Ershov Maxim
Department Of Computer Hardware University Of Aizu
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Ryzhii Victor
Department Of Compurter Hardware University Of Aizu
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