Fourier Analysis-Based Method for High-Frequency Performance Calculation of Heterojunction Bipolar Transistor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-08-15
著者
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Khrenov G
Univ. Aizu Aizu‐wakamatsu Jpn
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RYZHII Victor
Department of Computer Hardware, University of Aizu
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KHRENOV Gregory
Department of Computer Hardware, University of Aizu
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Ryzhii Victor
Department Of Computer Hardware University Of Aizu
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Ryzhii Victor
Department Of Compurter Hardware University Of Aizu
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KARTASHOV Sergey
Institute of Physics and Technology
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Khrenov Gregory
Department Of Computer Hardware University Of Aizu
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- Influence of Electron Scattering on Current Gain of Heterojunction Bipolar Transistor Operating in Coherent Regime
- High-Field Electron Transport in SiGe Alloy
- Frequency-Dependent Collector Tansport Factor of Lateral Hot Electron Tansistor
- Fourier Analysis-Based Method for High-Frequency Performance Calculation of Heterojunction Bipolar Transistor
- Modeling of Electron Injection and Transport in Multiple Quantum Well Infrared Photodetectors
- Device Physics and Modeling of Multiple Quantum Well Infrared Photodetectors
- Unipolar Darlington Infrared Phototransistor
- Hot Electron Effects in Infrared Multiple-Quantum-Well Phototransistor Victor
- Impact of Plasma Effects on the High-Frequency Performance of Induced-Base Hot-Electron Transistors
- Contact and Space-Charge Effects in Quantum Well Infrared Photodetectors
- Device Physics and Modeling of Multiple Quantum Well Infrared Photodetectors