Impact of Plasma Effects on the High-Frequency Performance of Induced-Base Hot-Electron Transistors
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概要
- 論文の詳細を見る
High-frequency performance of an induced-base hot-electron transistor (IBHET) is studied theoretically taking into account the excitation of the standing plasma waves with a linear dispersion law in its quantum well base. It is shown that the frequency-dependent small-signal transconductance of the IBHETs can exhibit sharp resonances. The resonant transconductance can markedly exceed the steady-state trans conductance. The resonances cancorrespond to the terahertz range of frequencies and can be effectively tuned by the collector -base voltage.
- 社団法人応用物理学会の論文
- 1997-05-01
著者
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RYZHII Victor
Department of Computer Hardware, University of Aizu
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Ryzhii Victor
Department Of Compurter Hardware University Of Aizu
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