Energy Loss of High-Density Hot Carriers in Polar Semiconductors

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概要

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• The rate of energy loss of hot carriers is calculated as a function of the carrier density by assuming that the energy loss is due to interactions with longitudinal optical phonons. It is found that for low effective mass carriers, both the screening and the Fermi degeneracy greatly reduce the energy loss even at room temperature.

• 社団法人応用物理学会の論文
• 1982-08-20

著者

• Sato Hisanao

  Materials Research Laboratory Matsushita Electric Industrial Co.

関連論文

• Phonon Fluctuation Model for 1/f Noise in Semiconductors
• Energy Loss of High-Density Hot Carriers in Polar Semiconductors
• Carrier Density Fluctuations due to Distribution of Traps in Semiconductors

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