Phonon Fluctuation Model for 1/f Noise in Semiconductors

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概要

• 論文の詳細を見る

• Noise current caused by acoustic scattering is calculated in the case of semi-conductors on the assumptions that the number of acoustic phon<ans fluctuateswith a 1// spectrum and independently with each other. The spectral density ofthe noise current is found to be inversely proportional to the effective number ofstates.

• 社団法人日本物理学会の論文
• 1980-11-15

著者

• Sato Hisanao

  Materials Research Laboratory Matsushita Electric Industrial Co.

• Sato Hisanao

  Materials Research Laboratory Matsushita Electric Industrial Co. Ltd.

関連論文

• Phonon Fluctuation Model for 1/f Noise in Semiconductors
• Energy Loss of High-Density Hot Carriers in Polar Semiconductors
• Carrier Density Fluctuations due to Distribution of Traps in Semiconductors

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