Carrier Density Fluctuations due to Distribution of Traps in Semiconductors

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概要

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• A formula is given for the spectral density of the free electron number fluctuations caused by the distribution of traps in the band gap. The effect on the spectral density of various trap distributions are studied. It is found thatlarge trap densities change not only the magnitude, but also the frequency dependence of the spectral density. The linear response of the carrier density to external excitations is briefly discussed to show the relation between the response and the fluctuation.

• 社団法人応用物理学会の論文
• 1982-07-20

著者

• Sato Hisanao

  Materials Research Laboratory Matsushita Electric Industrial Co.

関連論文

• Phonon Fluctuation Model for 1/f Noise in Semiconductors
• Energy Loss of High-Density Hot Carriers in Polar Semiconductors
• Carrier Density Fluctuations due to Distribution of Traps in Semiconductors

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