Junction-Curvature Effect on Breakdown Voltage of Gate-Controlled Planar Diode

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1978-08-05

著者

• Omura Yasuhisa

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Omura Yasuhisa

  Musashino Electrical Communication Laboratory

• Ohwada Kuniki

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Electrical Characteristics of an Upper Interface on a Buried SiO_2 Layer Formed by Oxygen Implantation
• Junction-Curvature Effect on Breakdown Voltage of Gate-Controlled Planar Diode
• Lateral Unidirectional Bipolar-Type Insulated-Gate Transistors : B-3: NOVEL DEVICES
• Bulk Doping Effect on Field-Effect Mobility of MOSFETs
• Gate Oxide Defects near the Selectively Oxidized Silicon

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