Gate Oxide Defects near the Selectively Oxidized Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1978-04-05
著者
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Sakuma Kazuhito
Musasino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation.
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Ohwada Kuniki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Ohwada Kuniki
Musasino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation.
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EHARA Kohei
Musasino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation.
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Ehara Kohei
Musasino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation.
関連論文
- Electrical Characteristics of an Upper Interface on a Buried SiO_2 Layer Formed by Oxygen Implantation
- Junction-Curvature Effect on Breakdown Voltage of Gate-Controlled Planar Diode
- Gate Oxide Defects near the Selectively Oxidized Silicon