Electrical Characteristics of an Upper Interface on a Buried SiO_2 Layer Formed by Oxygen Implantation

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概要

• 論文の詳細を見る

• The electrical characteristics of an upper interface on a buried oxide layer formed by oxygen implantation in an Si wafer and subsequent thermal annealing were studied using an MOS diode and capacitance-voltage (C-V) measurements. The measured C-V curves strongly depended on the ion dose. The C-V curve was independent of the gate voltage for a dose of 1.2×10^<18>cm^<-2>, voltage-dependent for doses above 1.8×10^<18>cm^<-2>, and similar to those for thermal oxide for a dose of 2.4×10^<18>cm^<-2>. This strong dependence on the ton dose is considered to result from a change in the interface structure with increase in dose. In this change, the transition layer existing between the buried oxide and the upper Si layer at low doses, which shields the upper Si layer from external electric fields, disappears with increase in dose.

• 社団法人応用物理学会の論文
• 1983-07-20

著者

• Nakashima Sadao

  Musashino Electrical Communication Laboratory

• Nakashima Sadao

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Ohwada Kuniki

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

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• Electrical Characteristics of an Upper Interface on a Buried SiO_2 Layer Formed by Oxygen Implantation
• Junction-Curvature Effect on Breakdown Voltage of Gate-Controlled Planar Diode
• Gate Oxide Defects near the Selectively Oxidized Silicon

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