Infrared Quenching of Photocapacitance in ZnS : Ag Evaporated Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1978-05-05
著者
-
Kurita Shoichi
Department Of Electrical Engineering Faculty Of Engineering Keio University
-
Suda Toshikazu
Electronic Department The Institute Of Vacational Training
-
MATSUZAKI Kichie
Department of Electrical Engineering, Faculty of Engineering, Keio University
-
Matsuzaki Kichie
Department Of Electrical Engineering Faculty Of Engineering Keio University
関連論文
- Photoelectric Properties of n-ZnSe/p-Si or p^+-GaAs Heterojunctions : III-2: II-VI COMPOUND SOLAR CELLS AND OTHERS
- Internal Loss and Gain Factor of InGaAsP/GaAs Laser
- Dynamic Quenching of Photocapacitance in CdS: Cu Evaporated Thin Films
- n-ITO/p-InGaAsP Solar Cell Fabricated on GaAs Substrate
- Color eletroluminescence from ZnS thin films multi-doped with rare-earth ions.
- Properties of Zn_3P_2 Thin Films Grown by Ionized-Cluster Beam Deposition
- Anodic Oxidation of Zinc Phosphide
- Polycrystalline Zn_3P_2/Indium-Tin Oxide Solar Cells
- Sputtered n-ITO/p-InP Solar Cells : II-1: COMPOUND SOLAR CELLS
- Infrared Quenching of Photocapacitance in ZnS : Ag Evaporated Thin Films
- Influence of Ag Photodoping on Photoinduced Changes in As_2S_3 Glass Films
- Zn_3P_2/ITO Heterojunction Solar Cells : I-3: NEW STRUCTURE AND ADVANCED MATERIAL (1)