Properties of Zn_3P_2 Thin Films Grown by Ionized-Cluster Beam Deposition
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概要
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Zinc phosphide (Zn_3P_2) thin films have been fabricated by ionized-cluster beam (ICB) deposition on glass substrates. Highly crystalline Zn_3P_2 films are obtained with a strong preferred orientation along the c-axis by optimizing the acceleration voltage and substrate temperature. The Zn_3P_2 films have extremely good stoichiometry compared with those by conventional vacuum evaporation : fluorescent X-ray spectroscopy indicates Zn_3P_<2.05> for the Zn_3P_2 films deposited at an acceleration voltage of 2 kV and substrate temperature of 300℃. The absorption coefficient is deduced from the optical transmission and reflectivity data; the fundamental absorption edge is obtained as 1.55 eV at 300 K.
- 社団法人応用物理学会の論文
- 1983-12-20
著者
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Kanno Tsuneo
Department Of Electronics Institute Of Vocational Training
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Kurita Shoichi
Department Of Electrical Engineering Faculty Of Engineering Keio University
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Suda Toshikazu
Department Of Electronics Institute Of Vocational Training
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Suda Toshikazu
Department Of Electrical Engineering Faculty Of Engineering Keio University
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