n-ITO/p-InGaAsP Solar Cell Fabricated on GaAs Substrate
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概要
- 論文の詳細を見る
n-ITO/p-InGaAsP solar cells have been fabricated. Lattice-matched LPE growth of InGaAsP layers on GaAs has been carried out before the ITO film is deposited by rf sputtering. The best cell without an antireflection coating exhibits a conversion efficiency of 9.6% under AMI illumination and the corresponding open-circuit voltage, short-circuit current density, and fill factor are 0.6 V, 24.5 mA/cm^2, and 0.653, respectively.
- 社団法人応用物理学会の論文
- 1987-02-20
著者
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Takahashi N.shin-ichi
Department Of Electrical Engineering Keio University
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KURITA Shoichi
Department of Electrical Engineering, Faculty of Engineering, Keio University
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Kurita Shoichi
Department Of Electrical Engineering Keio University
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Kurita Shoichi
Department Of Electrical Engineering Faculty Of Engineering Keio University
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Narui Hironobu
Department Of Electrical Engineering Keio University
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MATSUBARA Shuichi
Department of Electrical Engineering, KEIO University
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Matsubara Shuichi
Department Of Electrical Engineering Keio University
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