Considerations on the Stress Effects in the As-Doped Oxide Film Roughening

スポンサーリンク

概要

• 論文の詳細を見る

• Experimental and calculated results concerning thermal stress effects on roughening of As-doped oxide films are described. Thermal stresses of As-doped oxide layers are calculated, based on the assumption that the thermal strains at all boundaries are equal to each other. According to the experimental results, the film roughening phenomenon in As-doped oxide film depends on both the materials of the insulating substrates, and on the sign of the thermal stresses.

• 社団法人応用物理学会の論文
• 1978-12-05

著者

• Tsunoda Yoshihiro

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Autodoping Effect of Antimony-Arsenic Simultaneous Diffusion in Silicon
• Effect of Stress on Film Roughening in As-Doped Oxide
• Q-Switched Nd:YAG Laser Annealing of an As Implanted Si Layer, and Its Application to a Buried Collector
• Considerations on the Stress Effects in the As-Doped Oxide Film Roughening
• Defects Generation at Si-Undoped Poly Si Interface in Oxidation Process

スポンサーリンク