Defects Generation at Si-Undoped Poly Si Interface in Oxidation Process

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-01-05

著者

• Tsunoda Yoshihiro

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Autodoping Effect of Antimony-Arsenic Simultaneous Diffusion in Silicon
• Effect of Stress on Film Roughening in As-Doped Oxide
• Q-Switched Nd:YAG Laser Annealing of an As Implanted Si Layer, and Its Application to a Buried Collector
• Considerations on the Stress Effects in the As-Doped Oxide Film Roughening
• Defects Generation at Si-Undoped Poly Si Interface in Oxidation Process

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