Q-Switched Nd:YAG Laser Annealing of an As Implanted Si Layer, and Its Application to a Buried Collector

スポンサーリンク

概要

• 論文の詳細を見る

• An arsenic implanted Si layer has been annealed with a Q-switched Nd:YAG laser. As^+ was implanted into a P-type (111) Si wafer (10Ω・cm) at 100 keV and with a dose of 5×10^<15> cm^<-2>. Optimum laser-irradiation conditions were found to be a energy density of 2.3 J・cm^<-2>, 80% overlapping ratio, a repetition rate of 6 kHz, and a substrate temperature of 370℃. Under these conditions, the Si surface was smooth, As ions were almost fully activated, and residual damage was not observed. The annealed layer was successfully applied to a buried collector in bipolar IC_s. I_c-V_<CE> characteristics and isolation breakdown voltage in ICs were as satisfactory as in the case of conventional buried layer diffusion with arsenic-doped oxide.

• 社団法人応用物理学会の論文
• 1982-02-05

著者

• Tsunoda Yoshihiro

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Autodoping Effect of Antimony-Arsenic Simultaneous Diffusion in Silicon
• Effect of Stress on Film Roughening in As-Doped Oxide
• Q-Switched Nd:YAG Laser Annealing of an As Implanted Si Layer, and Its Application to a Buried Collector
• Considerations on the Stress Effects in the As-Doped Oxide Film Roughening
• Defects Generation at Si-Undoped Poly Si Interface in Oxidation Process

スポンサーリンク