Compatible High and Low Voltage CMOS Devices Using SIMOX Technology : A-3: LSI-2
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
-
Kato Kotaro
Musashino Electrical Communication Laboratory
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Nakashima Sadao
Musashino Electrical Communication Laboratory
-
AKIYA Masahiro
Musashino Electrical Communication Laboratory
関連論文
- Study of the Injection Type IPOS Scheme
- LSIs for Communication Uses : A-2: LSI-1
- Compatible High and Low Voltage CMOS Devices Using SIMOX Technology : A-3: LSI-2
- Electrical Characteristics of an Upper Interface on a Buried SiO_2 Layer Formed by Oxygen Implantation