Study of the Injection Type IPOS Scheme
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概要
- 論文の詳細を見る
A new method, called the injection type IPOS, which consists of anodization of a n-type layer by injection of holes from a p-type substrate and oxidation, is reported. Formation of porous silicon film, anode potential-current characteristics and problems in application to integrated circuit were investigated. As a result, characteristics in anodization and oxidation peculiar to the injection type IPOS scheme were found. Satisfactory results about the isolation characteristic make it clear that this scheme can be applied to isolation in integrated circuit.
- 社団法人応用物理学会の論文
- 1977-09-05
著者
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Kato Kotaro
Musashino Electrical Communication Laboratory
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Kato Kotaro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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UNAGAMI Takashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Unagami Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Study of the Injection Type IPOS Scheme
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