Comments on the Nature of Electron Leakage in InGaAsP/InP Double Heterostructure

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概要

• 論文の詳細を見る

• Non-radiative Auger recombination has been found to be capable of providing an alternative interpretation of the recent experimental observation of electron leakage in InGaAsP/InP double heterostructure.

• 社団法人応用物理学会の論文
• 1982-05-20

著者

• YARIV A.

  California Institute of Technology

• CHIU L.C.

  California Institute of Technology

関連論文

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• Mode Stabilized InGaAsP/InP Terrace-Large Optical Cavity Laser Fabricated on Semi-Insulating InP
• A New GaInAsP/InP T-Laser at 1.2μm Fabricated on Semi-Insulating Substrate

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