Mode Stabilized InGaAsP/InP Terrace-Large Optical Cavity Laser Fabricated on Semi-Insulating InP

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概要

• 論文の詳細を見る

• Mode stabilized terrace-large optical cavity (TR-LOC) lasers have been fabricated on semi-insulating (SI) InP substrates. The fabrication process involves a single-step liquid phase epitaxial (LPE) growth and a lateral Zn diffusion. The laser operates in a stable single transverse mode and is capable of delivering a power exceeding 300 mW/facet (at pulsed operation) with very smooth far-field pattern.

• 社団法人応用物理学会の論文
• 1982-09-20

著者

• MARGALIT S.

  California Institute of Technology

• YARIV A.

  California Institute of Technology

• Koren U.

  California Institute Of Technology

• YU K.L.

  California Institute of Technology

• Yu K.

  California Institute Of Technology

• Chen T.

  California Institute Of Technology

関連論文

• Proposed GaAs-Al-GaAs Metal Base Transistor
• Intrinsic Limitations on the High Speed Performance of High Electron Mobility Transistors
• Comments on the Nature of Electron Leakage in InGaAsP/InP Double Heterostructure
• Dependence of T_0 on P-Cladding Layer Doping Level in InGaAsP Lasers
• Mode Stabilized InGaAsP/InP Terrace-Large Optical Cavity Laser Fabricated on Semi-Insulating InP
• A New GaInAsP/InP T-Laser at 1.2μm Fabricated on Semi-Insulating Substrate

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