Dependence of T_0 on P-Cladding Layer Doping Level in InGaAsP Lasers

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概要

• 論文の詳細を見る

• The effects of the doping level in the P-cladding layer on the T_0 of InGaAsP lasers have been investigated. A threshold temperature parameter T_0 as high as 90 K has been observed. A new laser structure which involves a simple modification scheme applicable to most laser structures with improved temperature sensitivity has been demonstrated.

• 社団法人応用物理学会の論文
• 1983-09-20

著者

• MARGALIT S.

  California Institute of Technology

• YARIV A.

  California Institute of Technology

• CHIU L.C.

  California Institute of Technology

• Koren U.

  California Institute Of Technology

• CHEN T.R.

  California Institute of Technology

• YU K.L.

  California Institute of Technology

• HASSON A.

  California Institute of Technology

• Yu K.

  California Institute Of Technology

• Chen T.

  California Institute Of Technology

関連論文

• Proposed GaAs-Al-GaAs Metal Base Transistor
• Intrinsic Limitations on the High Speed Performance of High Electron Mobility Transistors
• Comments on the Nature of Electron Leakage in InGaAsP/InP Double Heterostructure
• Dependence of T_0 on P-Cladding Layer Doping Level in InGaAsP Lasers
• Mode Stabilized InGaAsP/InP Terrace-Large Optical Cavity Laser Fabricated on Semi-Insulating InP
• A New GaInAsP/InP T-Laser at 1.2μm Fabricated on Semi-Insulating Substrate

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