Scanning Tunneling Microseopy Observations and Analysis of Thermal Etching of Si(100) with Br and Cl

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概要

• 論文の詳細を見る

• The surface morphologies that result from spontaneous etching of Si(100)-2×1 with Br and Cl have been studied using scanning tunneling microscopy. Layer-by-layer etching, which characterized steady state removal, yields bounded surface roughness. The etch pits, step profiles, and Si regrowth structures produced in the range 700-900 K exhibit characteristic patterns that vary with temperature because they reflect atomic level interactions. The date obtained with scanning tunneling microscopy 'STM) make it possible to examine these interactions and to extract information about etching dynamics.

• 社団法人応用物理学会の論文
• 1997-04-30

著者

• ALDAO Celso

  Institute of Materials Science and Technology, Unicversidad Nacional de Mar del Plata-CONICET

• WEAVER John

  Department of Materials Science & Chemical Engineering, University of Minnesota

• Aldao C

  Univ. Nacional De Mar Del Plata Mar Del Plata Arg

• Aldao Celso

  Institute Of Materials Science And Technology Unicversidad Nacional De Mar Del Plata-conicet

• Weaver John

  Department Of Materials Science And Chemical Engineering University Of Minnesota

• ALDAO Celso

  Institute of Materials Science and Technology (INTEMA), Universidad Nacional de Mar del Plata-CONICET

関連論文

• ハロゲンによるSi(100)-2×1表面のエッチング
• 電子と光子による半導体表面欠陥の生成
• Scanning Tunneling Microseopy Observations and Analysis of Thermal Etching of Si(100) with Br and Cl

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