Formation of Sendust Films by DC Opposite Sputtering Method

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概要

• 論文の詳細を見る

• Sendust films were prepared using DC opposite sputtering equipment. Films with a low coercive force of 0.5 Oe and an initial permeability of 1300 at 6 MHz can be prepared at a deposition rate of 5.5 μm/h without annealing of the films after the deposition. The way in which sputtering conditions influence the coercive force of the films was also investigated.

• 社団法人応用物理学会の論文
• 1986-02-20

著者

• Noro Yoshihiko

  Consumer Products Research Center Hitachi Lid.

• Miura Michiyori

  Consumer Products Research Center Hitachi Lid.

• Tanaka Katsuyuki

  Consumer Products Research Center Hitachi Lid.

関連論文

• Magnetic and Crystallographical Characteristics of the Sendust Films formed by DC Opposite Sputtering Method
• Crystallographic Character of ZnO Thin Film Formed at Low Sputtering Gas Pressure
• Formation of Sendust Films by DC Opposite Sputtering Method

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