Crystallographic Character of ZnO Thin Film Formed at Low Sputtering Gas Pressure

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概要

• 論文の詳細を見る

• The crystallographic character of ZnO thin films formed by the rf sputtering technique were investigated using X-ray diffraction and RHEED. When the sputtering gas pressure is 5×10^<-3> Torr, there is no preferred orientation of the crystal axis near the surface of ZnO thin film, but below its surface, the c-axis is oriented normal to the substrate within a certain distribution angle. The crystallites reorient so that the c-axes are normal to the substrate as new surface layers are formed.

• 社団法人応用物理学会の論文
• 1982-02-05

著者

• Miura Michiyori

  Consumer Products Research Center Hitachi Lid.

• Miura Michiyori

  Consumer Products Research Center Hitachi Ltd.

関連論文

• Magnetic and Crystallographical Characteristics of the Sendust Films formed by DC Opposite Sputtering Method
• Crystallographic Character of ZnO Thin Film Formed at Low Sputtering Gas Pressure
• Formation of Sendust Films by DC Opposite Sputtering Method

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