X-Ray Photoelectron Spectroscopy Study of GaAs (001) and InP (001) Cleaning Procedures Prior to Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
The effect of chemical etching by H2S04 / H202 / H20 (5/1/1) mixtures and of mechanopolishing by bromine-methanol diluted solution on GaAs (001) and InP (001) substrates for molecular beam epitaxy (MBE) has been studied using X-ray photoelectron spectroscopy (XPS). The final rinse in running deionized water does not produce any passivating oxide layer on the substrate surface. Oxidation observed on GaAs and InP after these cleaning procedures occurs during substrate handling in air. The H2S04/ H202 / H20 mixture produces arsenic rich surface layers having an atomic ratio As/Ga of 1.15, whereas the bromine-methanol mechanopolishing leads to an arsenic or phosphorus depleted surface with atomic ratios As/Ga=0.7 and P/In=0.65.
- 社団法人応用物理学会の論文
- 1985-07-20
著者
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Massies J.
Laboratoire Physique Du Solide Et Energie Solaire C.n.r.s.
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Massies J.
Laboratoire De Physique Du Solide Et Energie Solaire
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Contour J.p.
Laboratoire Physique Du Solide Et Energie Solaire C. N. R. S
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Contour J.p.
Laboratoire Physique Du Solide Et Energie Solaire C.n.r.s.
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Saletes A.
Laboratoire Physique du Solide et Energie Solaire, C.N.R.S.
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Saletes A.
Laboratoire Physique Du Solide Et Energie Solaire C.n.r.s.
関連論文
- X-Ray Photoelectron Spectroscopy Study of GaAs (001) and InP (001) Cleaning Procedures Prior to Molecular Beam Epitaxy
- An XPS Study of the Passivating Oxide Layer Produced on GaAs (001) Substrate by Heating in Air above 200℃ : Surfaces, Interfaces and Films
- Residual Carbon and Oxygen Surface Contamination of Chemically Etched GaAs (001) Substrates