Residual Carbon and Oxygen Surface Contamination of Chemically Etched GaAs (001) Substrates

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概要

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• Several different cleaning procedures for GaAs (001) substrates are compared using X-ray photoelectron spectroscopy. This work emphasizes the effect of the last etching step: HCl-, HF-ethanol (10%), bromine-methanol (1%), performed on a spinner (3000 rpm) operated in a nitrogen dry box, and running deionized water (RDIW). These four etchants lead to deoxidized surfaces, although RDIW leaves a fractional coverage of sligthly bounded oxygen species (&sime 0.15 monolayer). The residual carbon contamination is around 0.2 monolayer whatever the etchant used and is removable by flash heating at 400℃ under ultrahigh vacuum. RDIW, HCl- and HF-ethanol do not produce any significant etching of the GaAs matrix whereas bromine-methanol (1%) removes &sime 0.2μm per cm^3 of solution.

• 社団法人応用物理学会の論文
• 1986-01-20

著者

• Massies J.

  Laboratoire Physique Du Solide Et Energie Solaire C. N. R. S

• Massies J.

  Laboratoire De Physique Du Solide Et Energie Solaire

• Contour J.p.

  Laboratoire Physique Du Solide Et Energie Solaire C. N. R. S

• SALIETES A.

  Laboratoire Physique du Solide et Energie Solaire, C. N. R. S

• Salietes A.

  Laboratoire Physique Du Solide Et Energie Solaire C. N. R. S

関連論文

• X-Ray Photoelectron Spectroscopy Study of GaAs (001) and InP (001) Cleaning Procedures Prior to Molecular Beam Epitaxy
• An XPS Study of the Passivating Oxide Layer Produced on GaAs (001) Substrate by Heating in Air above 200℃ : Surfaces, Interfaces and Films
• Residual Carbon and Oxygen Surface Contamination of Chemically Etched GaAs (001) Substrates

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